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| BU407 SILICON EPITAXIAL PLANNAR TRANSISTOR GENERAL DESCRIPTION High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time CONDITIONS VBE = 0V MIN Tmb 25 IC = 5.0A; IB = 0.5A IC=5A,-IB(end)=0.5A,VCC=60V MAX 330 150 7 15 60 1.0 0.75 UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 330 150 5 7 4 60 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=400V VEB=5V IC=10mA IC = 5.0A; IB = 0.5A IC = 2.0A; VCE = 5V IC = 0.5A; VCE = 10V VCB = 10V IC=5A,-IB(end)=0.5A,VCC=60V IC=5A,-IB(end)=0.5A,VCC=60V IC=5A,-IB(end)=0.5A,VCC=60V MIN MAX 5.0 1.0 1.0 150 30 10 UNIT mA mA V V MHz pF us us us 0.75 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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